IHW15N120R3

IHW15N120R3 vs IHW15N120R3,H15R1203, vs IHW15N120R3/H15R1203

 
PartNumberIHW15N120R3IHW15N120R3,H15R1203,IHW15N120R3/H15R1203
DescriptionIGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.48 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation254 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesRC--
PackagingTube--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIHW15N120R3FKSA1 IHW15N12R3XK SP000521590--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IHW15N120R3 IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
IHW15N120R3FKSA1 IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
IHW15N120R3FKSA1 IGBT 1200V 30A 254W TO247-3
IHW15N120R3,H15R1203, ブランドニューオリジナル
IHW15N120R3/H15R1203 ブランドニューオリジナル
IHW15N120R3S ブランドニューオリジナル
IHW15N120R3XK Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW15N120R3FKSA1)
IHW15N120R3 IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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