 |  | | |
| PartNumber | IHW25N120R2 | IHW25N120R2 H25R1202 | IHW25N120R2,H25N1202, |
| Description | IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Pd Power Dissipation | 365 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | 600V TRENCHSTOP | - | - |
| Packaging | Tube | - | - |
| Height | 20.95 mm | - | - |
| Length | 15.9 mm | - | - |
| Width | 5.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | TRENCHSTOP | - | - |
| Part # Aliases | IHW25N120R2FKSA1 IHW25N12R2XK SP000212016 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IHW25N120R2 | IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A | |
| IHW25N120R2FKSA1 | IGBT 1200V 50A 365W TO247-3 | ||
Infineon Technologies |
IHW25N120R2FKSA1 | IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | |
| IHW25N120R2 H25R1202 | ブランドニューオリジナル | ||
| IHW25N120R2,H25N1202, | ブランドニューオリジナル | ||
| IHW25N120R2,IHW30N160R2, | ブランドニューオリジナル | ||
| IHW25N120R2S | ブランドニューオリジナル | ||
| IHW25N120R2XK | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW25N120R2FKSA1) | ||
| IHW25N120R2 | IGBT Transistors REVERSE CONDUCT IGBT 1200V 25A |