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| PartNumber | IMH21T110 |
| Description | Bipolar Transistors - Pre-Biased TRANS DIGI BJT NPN 20V 600MA 6PIN |
| Manufacturer | ROHM Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased |
| RoHS | Y |
| Configuration | Dual |
| Transistor Polarity | NPN |
| Typical Input Resistor | 10 kOhms |
| Mounting Style | SMD/SMT |
| Package / Case | SMT-6 |
| DC Collector/Base Gain hfe Min | 820 |
| Collector Emitter Voltage VCEO Max | 20 V |
| Continuous Collector Current | 600 mA |
| Peak DC Collector Current | 600 mA |
| Pd Power Dissipation | 300 mW |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | IMH21 |
| Packaging | Reel |
| DC Current Gain hFE Max | 2700 |
| Emitter Base Voltage VEBO | 12 V |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Width | 1.6 mm |
| Brand | ROHM Semiconductor |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Part # Aliases | IMH21 |