IPA105N15

IPA105N15N3 G vs IPA105N150N3G vs IPA105N15N3

 
PartNumberIPA105N15N3 GIPA105N150N3GIPA105N15N3
DescriptionMOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current37 A--
Rds On Drain Source Resistance9.1 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation40.5 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Forward Transconductance Min33 S--
Fall Time9 ns-9 ns
Product TypeMOSFET--
Rise Time20 ns-20 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns-35 nS
Typical Turn On Delay Time17 ns--
Part # AliasesIPA105N15N3GXKSA1 IPA15N15N3GXK SP000677850--
Unit Weight0.077603 oz-0.211644 oz
Part Aliases--IPA105N15N3GXK IPA105N15N3GXKSA1 SP000677850
Package Case--TO-220-3
Pd Power Dissipation--40.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--37 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--10.5 Ohms
Qg Gate Charge--41 nC
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPA105N15N3 G MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
IPA105N15N3GXKSA1 MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3
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