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| PartNumber | IPA60R520E6 TK8A60 | IPA60R520E6,6R520E6 | IPA60R520E6 |
| Description | Darlington Transistors MOSFET N-Ch 650V 8.1A TO220FP-3 CoolMOS E6 | ||
| Manufacturer | - | - | INF |
| Product Category | - | - | FETs - Single |
| Series | - | - | CoolMOS E6 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPA60R520E6XK IPA60R520E6XKSA1 SP000797614 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 29 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 8.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 470 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Qg Gate Charge | - | - | 23.4 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA60R520E6XKSA1 | MOSFET LOW POWER_LEGACY | |
Infineon Technologies |
IPA60R520E6XKSA1 | MOSFET N-CH 600V 8.1A TO220 | |
| IPA60R520E6 TK8A60 | ブランドニューオリジナル | ||
| IPA60R520E6,6R520E6 | ブランドニューオリジナル | ||
| IPA60R520E6 | Darlington Transistors MOSFET N-Ch 650V 8.1A TO220FP-3 CoolMOS E6 |