 |  | |
| PartNumber | IPAW60R190CEXKSA1 | IPAW60R180P7SXKSA1 |
| Description | MOSFET CONSUMER | MOSFET |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 26.7 A | 18 A |
| Rds On Drain Source Resistance | 440 mOhms | 145 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 63 nC | 25 nC |
| Minimum Operating Temperature | - 40 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 176 W | 26 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 16.15 mm | - |
| Length | 10.65 mm | - |
| Series | CoolMOS CE | CoolMOS P7 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.85 mm | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 12 ns |
| Factory Pack Quantity | 450 | 450 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 90 ns | 85 ns |
| Typical Turn On Delay Time | 12 ns | 14 ns |
| Part # Aliases | IPAW60R190CE SP001391612 | IPAW60R180P7S SP001606072 |
| Unit Weight | 0.211644 oz | 0.068784 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPAW60R190CEXKSA1 | MOSFET CONSUMER | |
| IPAW60R180P7SXKSA1 | MOSFET N-CHANNEL 650V 18A TO220 | ||
| IPAW60R190CEXKSA1 | MOSFET N-CH 600V TO220-3 | ||
Infineon Technologies |
IPAW60R180P7SXKSA1 | MOSFET | |
| IPAW60R180P7S | SP001606072 (Alt: IPAW60R180P7S) | ||
| IPAW60R190CE | 600V CoolMOS CE Power Transisto |