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| PartNumber | IPB023N06N3 | IPB023N06N3G | IPB023N06N3 G |
| Description | 140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6 | |
| Manufacturer | Infineon Technologies | INF | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | FETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | IPB023N06 | - | IPB023N06 |
| Packaging | Reel | - | Reel |
| Part Aliases | IPB023N06N3GATMA1 | - | IPB023N06N3GATMA1 |
| Unit Weight | 0.056438 oz | - | 0.056438 oz |
| Package Case | TO-263-7 | - | TO-263-7 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single Quint Source | - | Single Quint Source |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 214 W | - | 214 W |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 23 ns | - | 23 ns |
| Rise Time | 90 ns | - | 90 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 140 A | - | 140 A |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Rds On Drain Source Resistance | 2.3 mOhms | - | 2.3 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 62 ns | - | 62 ns |
| Typical Turn On Delay Time | 31 ns | - | 31 ns |
| Channel Mode | Enhancement | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| IPB023N06N3 | ブランドニューオリジナル | ||
| IPB023N06N3G | 140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | ||
| IPB023N06N3 G | IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6 | ||
Infineon Technologies |
IPB023N06N3GATMA1 | MOSFET N-CH 60V 140A TO263-7 |