 |  | | |
| PartNumber | IPB025N10N3GE8187ATMA1 | IPB025N10N3GE8197ATMA1 | IPB025N10N3GE818XT |
| Description | MOSFET N-CH 100V 180A TO263-7 | - Bulk (Alt: IPB025N10N3GE8197ATMA1) | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | IPB025N10 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB025N10N3GE8187ATMA1 SP000939338 |
| Unit Weight | - | - | 0.056438 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-263-7 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 300 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 28 ns |
| Rise Time | - | - | 58 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 180 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 2.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 84 ns |
| Qg Gate Charge | - | - | 155 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB025N10N3GE8187ATMA1 | MOSFET N-CH 100V 180A TO263-7 | |
| IPB025N10N3GE8197ATMA1 | - Bulk (Alt: IPB025N10N3GE8197ATMA1) | ||
| IPB025N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 |