 | | | |
| PartNumber | IPB042N10N3GATMA1 | IPB042N10N3 G | IPB042N10N3 G E8187 |
| Description | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 100V 100A D2PAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-3 | PG-TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 4.2 mOhms | 4.2 mOhms | 3.6 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 88 nC | 88 nC | 117 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 214 W | 214 W | 214 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 73 S | 73 S | 73 S |
| Fall Time | 14 ns | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 59 ns | 59 ns | 59 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | 48 ns | 48 ns |
| Typical Turn On Delay Time | 27 ns | 27 ns | 27 ns |
| Part # Aliases | G IPB042N10N3 IPB42N1N3GXT SP000446880 | IPB042N10N3GATMA1 IPB42N1N3GXT SP000446880 | IPB042N10N3GE8187ATMA1 IPB42N1N3GE8187XT SP000939332 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.077603 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB042N10N3GATMA1 | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | |
| IPB042N10N3 G | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | ||
| IPB042N10N3GE818XT | MOSFET N-Ch 100V 100A D2PAK-2 | ||
| IPB042N10N3 G E8187 | MOSFET N-Ch 100V 100A D2PAK-2 | ||
| IPB042N10N3GATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB042N10N3GE8187ATMA1 | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB042N10N3GATMA1-CUT TAPE | ブランドニューオリジナル | ||
| IPB042N10N | ブランドニューオリジナル | ||
| IPB042N10N3 | ブランドニューオリジナル | ||
| IPB042N10N3 G | Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 | ||
| IPB042N10N3G | 100V,100A,N Channel Power MOSFET | ||
| IPB042N10N3G , 2SD1898-H | ブランドニューオリジナル | ||
| IPB042N10N3GATMA1 , 2SD1 | ブランドニューオリジナル | ||
| IPB042N10N3GATMA1INFINEO | ブランドニューオリジナル | ||
| IPB042N10N3GS | ブランドニューオリジナル | ||
| IPB042N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2 |