 | |  | |
| PartNumber | IPB049NE7N3 G | IPB049N08N5ATMA1 | IPB049N06L3GATMA1 |
| Description | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 80V 80A D2PAK-2 | MOSFET N-CH 60V 80A TO263-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | 80 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 4.4 mOhms | 6.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | 2.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 68 nC | 42 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 150 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | OptiMOS 5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 52 S | 52 S | - |
| Fall Time | 8 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 7 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 27 ns | - |
| Typical Turn On Delay Time | 14 ns | 17 ns | - |
| Part # Aliases | IPB049NE7N3GATMA1 IPB49NE7N3GXT SP000641752 | IPB049N08N5 SP001227052 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB049NE7N3 G | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | |
| IPB049NE7N3GATMA1 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | ||
| IPB049N08N5ATMA1 | MOSFET N-Ch 80V 80A D2PAK-2 | ||
| IPB049NE7N3GATMA1 | MOSFET N-CH 75V 80A TO263-3 | ||
| IPB049N06L3GATMA1 | MOSFET N-CH 60V 80A TO263-3 | ||
| IPB049NE7N3 G | Darlington Transistors MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3 | ||
| IPB049N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | ||
| IPB049N06L3 | ブランドニューオリジナル | ||
| IPB049N06L3G | Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB049N10N | ブランドニューオリジナル | ||
| IPB049NE7N3 | ブランドニューオリジナル | ||
| IPB049NE7N3G | 75V,80A,N Channel Power MOSFET | ||
| IPB049N06L3 G | IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 |