 |  | | |
| PartNumber | IPB12CN10N G | IPB12CN10LG | IPB12CN10N |
| Description | MOSFET N-Ch 85V 67A D2PAK-2 | ||
| Manufacturer | Infineon | INF | INF |
| Product Category | MOSFET | IC Chips | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 85 V | - | - |
| Id Continuous Drain Current | 67 A | - | - |
| Rds On Drain Source Resistance | 12.9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPB12CN10NGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB12CN10N G | MOSFET N-Ch 85V 67A D2PAK-2 | |
Infineon Technologies |
IPB12CN10N G | MOSFET N-CH 100V 67A TO263-3 | |
| IPB12CNE8N G | MOSFET N-CH 85V 67A TO263-3 | ||
| IPB12CN10LG | ブランドニューオリジナル | ||
| IPB12CN10N | ブランドニューオリジナル | ||
| IPB12CN10NG | ブランドニューオリジナル | ||
| IPB12CNE8NG | ブランドニューオリジナル |