 | |  | |
| PartNumber | IPB144N12N3 G | IPB144N12N3GATMA1 | IPB140N08S404ATMA1 |
| Description | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | MOSFET N-CHANNEL 75/80V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | 120 V | - |
| Id Continuous Drain Current | 56 A | 56 A | - |
| Rds On Drain Source Resistance | 12.3 mOhms | 12.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 49 nC | 49 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 107 W | 107 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 31 S | 31 S | - |
| Fall Time | 4 ns | 4 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 24 ns | - |
| Typical Turn On Delay Time | 16 ns | 16 ns | - |
| Part # Aliases | IPB144N12N3GATMA1 IPB144N12N3GXT SP000694166 | G IPB144N12N3 IPB144N12N3GXT SP000694166 | IPB140N08S4-04 SP000989102 |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Qualification | - | - | AEC-Q101 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB144N12N3 G | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | |
| IPB144N12N3GATMA1 | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | ||
| IPB140N08S404ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB144N12N3GATMA1 | MOSFET N-CH 120V 56A TO263-3 | ||
| IPB14N03LAT | MOSFET N-CH 25V 30A D2PAK | ||
| IPB147N03LGATMA1 | MOSFET N-CH 30V 20A TO263-3 | ||
| IPB14N03LA | MOSFET N-CH 25V 30A D2PAK | ||
| IPB14N03LA G | MOSFET N-CH 25V 30A D2PAK | ||
| IPB140N08S404ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB144N12N3G | ブランドニューオリジナル | ||
| IPB144N12N3GS | ブランドニューオリジナル | ||
| IPB147N03L G | MOSFET N-Ch 30V 20A D2PAK-2 OptiMOS 3 | ||
| IPB147N03LG | ブランドニューオリジナル | ||
| IPB14N03 | ブランドニューオリジナル | ||
| IPB14N03L | ブランドニューオリジナル | ||
| IPB14N03LA P | ブランドニューオリジナル | ||
| IPB14N03LAG | MOSFET N-Ch 25V 30A D2PAK-2 | ||
| IPB14N03LAINTR-ND | ブランドニューオリジナル | ||
| IPB14N03LAP | ブランドニューオリジナル | ||
| IPB144N12N3 G | IGBT Transistors MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 |