 |  | | |
| PartNumber | IPB200N15N3GATMA1 | IPB200N15N3G | IPB200N15N3G 200N15N |
| Description | MOSFET MV POWER MOS | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPB200N15N3 IPB2N15N3GXT SP000414740 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB200N15N3GATMA1 | MOSFET MV POWER MOS | |
| IPB200N15N3GATMA1-CUT TAPE | ブランドニューオリジナル | ||
| IPB200N15N3G | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB200N15N3G 200N15N | ブランドニューオリジナル | ||
| IPB200N15N3GS | ブランドニューオリジナル | ||
Infineon Technologies |
IPB200N15N3GATMA1 | MOSFET N-CH 150V 50A TO263-3 |