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| PartNumber | IPB200N25N3 G | IPB200N25N3GATMA1 |
| Description | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | PG-TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 64 A | 64 A |
| Rds On Drain Source Resistance | 17.5 mOhms | 20 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 86 nC | 64 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 61 S | 61 S |
| Fall Time | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns |
| Part # Aliases | IPB200N25N3GATMA1 IPB2N25N3GXT SP000677896 | G IPB200N25N3 IPB2N25N3GXT SP000677896 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB200N25N3 G | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | |
| IPB200N25N3GATMA1 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | ||
| IPB200N25N3 G | Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: IPB200N25N3 G) | ||
| IPB200N25N3GATMA1 | MOSFET N-CH 250V 64A TO263-3 | ||
| IPB200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB200N25N | ブランドニューオリジナル | ||
| IPB200N25N3 | ブランドニューオリジナル | ||
| IPB200N25N3 G(SP0006778 | ブランドニューオリジナル | ||
| IPB200N25N3G(SP00067789 | ブランドニューオリジナル | ||
| IPB200N25N3G(SP000677896 | ブランドニューオリジナル | ||
| IPB200N25N3GXT | ブランドニューオリジナル |