 |  | |
| PartNumber | IPB260N06N3G | IPB260N06N3GATMA1 |
| Description | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 60V 27A TO263-3 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| IPB260N06N3G | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Infineon Technologies |
IPB260N06N3GATMA1 | MOSFET N-CH 60V 27A TO263-3 |