| PartNumber | IPB47N10S-33 | IPB47N10SL-26 | IPB47N10S33ATMA1 |
| Description | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS | MOSFET N-CH 100V 47A TO263-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 47 A | 47 A | - |
| Rds On Drain Source Resistance | 33 mOhms | 26 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 175 W | 175 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | SIPMOS | SIPMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | SIPMOS | SIPMOS | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 15 ns | 70 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 23 ns | 100 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 63 ns | 50 ns | - |
| Typical Turn On Delay Time | 25 ns | 50 ns | - |
| Part # Aliases | IPB47N10S33ATMA1 IPB47N1S33XT SP000225702 | IPB47N10SL26ATMA1 IPB47N1SL26XT SP000225701 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |