IPB600N2

IPB600N25N3 G vs IPB600N25N3GATMA1

 
PartNumberIPB600N25N3 GIPB600N25N3GATMA1
DescriptionMOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V250 V
Id Continuous Drain Current25 A25 A
Rds On Drain Source Resistance51 mOhms51 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge29 nC29 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation136 W136 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height4.4 mm4.4 mm
Length10 mm10 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
TypeOptiMOS 3 Power-Transistor-
Width9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min24 S24 S
Fall Time8 ns8 ns
Product TypeMOSFETMOSFET
Rise Time10 ns10 ns
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns22 ns
Typical Turn On Delay Time10 ns10 ns
Part # AliasesIPB600N25N3GATMA1 IPB6N25N3GXT SP000676408G IPB600N25N3 IPB6N25N3GXT SP000676408
Unit Weight0.139332 oz0.068654 oz
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPB600N25N3 G MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3GATMA1 MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IPB600N25N3 G Trans MOSFET N-CH 250V 25A 3-Pin TO-263 T/R (Alt: IPB600N25N3 G)
IPB600N25N3GATMA1 MOSFET N-CH 250V 25A TO263-3
IPB600N20N3G ブランドニューオリジナル
IPB600N25N3GS ブランドニューオリジナル
IPB600N25N3G Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) TO-263
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