| PartNumber | IPB600N25N3 G | IPB600N25N3GATMA1 |
| Description | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 25 A | 25 A |
| Rds On Drain Source Resistance | 51 mOhms | 51 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 29 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 136 W | 136 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 24 S | 24 S |
| Fall Time | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 22 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Part # Aliases | IPB600N25N3GATMA1 IPB6N25N3GXT SP000676408 | G IPB600N25N3 IPB6N25N3GXT SP000676408 |
| Unit Weight | 0.139332 oz | 0.068654 oz |