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| PartNumber | IPB65R045C7ATMA1 | IPB65R045C7ATMA2 | IPB65R045C7 |
| Description | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | MOSFET N-CH 650V 46A TO-263-3 | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PG-TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 46 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 93 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 227 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C7 | - | CoolMOS C7 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 7 ns | - | 7 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | 14 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 82 ns | - | 82 ns |
| Typical Turn On Delay Time | 20 ns | - | 20 ns |
| Part # Aliases | IPB65R045C7 SP000929420 | - | - |
| Unit Weight | 0.068654 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPB65R045C7ATMA1 SP000929420 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 227 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 46 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V to 4 V |
| Rds On Drain Source Resistance | - | - | 45 mOhms |
| Qg Gate Charge | - | - | 93 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R045C7ATMA1 | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | |
Infineon Technologies |
IPB65R045C7ATMA1 | MOSFET N-CH 650V 46A TO-263-3 | |
| IPB65R045C7ATMA2 | MOSFET N-CH 650V 46A TO-263-3 | ||
| IPB65R045C7 | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 |