 |  |  | |
| PartNumber | IPBH6N03LA G | IPBH6N03LA | IPBH6N03LAG |
| Description | MOSFET N-Ch 25V 50A D2PAK-2 | MOSFET N-CH 25V 50A D2PAK | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 10.2 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 68 S / 34 S | - | - |
| Fall Time | 4.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPBH6N03LA G | MOSFET N-Ch 25V 50A D2PAK-2 | |
Infineon Technologies |
IPBH6N03LA | MOSFET N-CH 25V 50A D2PAK | |
| IPBH6N03LA G | MOSFET N-CH 25V 50A TO-263 | ||
| IPBH6N03LAG | ブランドニューオリジナル |