 |  |  | |
| PartNumber | IPD5N25S3-430 | IPD5N25S3430ATMA1 | IPD5N03LAG |
| Description | MOSFET N-Ch 250V 5A DPAK-2 | MOSFET N-CH TO252-3 | MOSFET N-CH 25V 50A TO252-3-11 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 430 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 4.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 41 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | IPD5N25 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8 ns | - | - |
| Typical Turn On Delay Time | 3 ns | - | - |
| Part # Aliases | IPD5N25S3430ATMA1 IPD5N25S343XT SP000876584 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD5N25S3-430 | MOSFET N-Ch 250V 5A DPAK-2 | |
| IPD5N25S3430ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD5N03LAG | MOSFET N-CH 25V 50A TO252-3-11 | ||
| IPD5N25S3-430 | MOSFET N-Ch 250V 5A DPAK-2 |