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| PartNumber | IPD60R3K3C6ATMA1 | IPD60R3K3C6 | IPD60R3K4CEAUMA1 |
| Description | MOSFET N-Ch 650V 1.7A DPAK-2 | MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6 | MOSFET N-CH 650V 2.6A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 1.7 A | 1.7 A | - |
| Rds On Drain Source Resistance | 3.3 Ohms | 2.97 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 4.6 nC | 4.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 18.1 W | 18.1 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS C6 | CoolMOS C6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 60 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Part # Aliases | IPD60R3K3C6 SP001117718 | IPD60R3K3C6BTMA1 SP000799130 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| RoHS | - | Y | - |
| Channel Mode | - | Enhancement | - |