 |  | | |
| PartNumber | IPD65R600E6ATMA1 | IPD65R600E | IPD65R600E6 |
| Description | MOSFET N-Ch 700V 7.3A DPAK-2 | MOSFET, N CH, 700V, 7.3A, TO-252-3 | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216) |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 7.3 A | - | - |
| Rds On Drain Source Resistance | 600 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 28 W | - | - |
| Configuration | Single | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | - | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS E6 | - | CoolMOS E6 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 64 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IPD65R600E6 SP001117096 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPD65R600E6BTMA1 IPD65R600E6XT SP000800216 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 63 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 7.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 540 mOhms |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R600E6ATMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 | |
| IPD65R600E6BTMA1 | MOSFET N-CH 650V 7.3A TO252-3 | ||
| IPD65R600E6ATMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 | ||
| IPD65R600E | MOSFET, N CH, 700V, 7.3A, TO-252-3 | ||
| IPD65R600E6 | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216) |