IPD80R1K4C

IPD80R1K4CEATMA1 vs IPD80R1K4CEBTMA1

 
PartNumberIPD80R1K4CEATMA1IPD80R1K4CEBTMA1
DescriptionMOSFET N-Ch 800V 3.9A DPAK-2MOSFET N-Ch 800V 3.9A DPAK-2
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current3.9 A3.9 A
Rds On Drain Source Resistance1.4 Ohms1.2 Ohms
Vgs th Gate Source Threshold Voltage3 V2.1 V
Vgs Gate Source Voltage30 V20 V
Qg Gate Charge23 nC23 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation63 W63 W
ConfigurationSingleSingle
TradenameCoolMOSCoolMOS
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesCoolMOS CECoolMOS CE
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Fall Time12 ns12 ns
Product TypeMOSFETMOSFET
Rise Time15 ns15 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time72 ns72 ns
Typical Turn On Delay Time25 ns25 ns
Part # AliasesIPD80R1K4CE SP001130972IPD80R1K4CE SP001100604
Unit Weight0.139332 oz0.139332 oz
RoHS-Y
Channel Mode-Enhancement
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPD80R1K4CEATMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEBTMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEATMA1 MOSFET N-Ch 800V 3.9A DPAK-2
Infineon Technologies
Infineon Technologies
IPD80R1K4CEBTMA1 MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CE Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
IPD80R1K4CEATMA1 , 2SD24 ブランドニューオリジナル
IPD80R1K4CEBTMA1 , 2SD24 ブランドニューオリジナル
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