 | | | |
| PartNumber | IPD90N06S4L-03 | IPD90N06S4L-05 | IPD90N06S4L-06 |
| Description | RF Bipolar Transistors MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | RF Bipolar Transistors MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | RF Bipolar Transistors MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 |
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 |
| Packaging | Reel | Reel | Reel |
| Part Aliases | IPD90N06S4L03ATMA1 IPD90N06S4L03ATMA2 IPD90N06S4L03XT SP001028764 | IPD90N06S4L05ATMA1 IPD90N06S4L05ATMA2 IPD90N06S4L05XT SP001028748 | IPD90N06S4L06ATMA1 IPD90N06S4L06ATMA2 IPD90N06S4L06XT SP001028682 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Package Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Id Continuous Drain Current | 90 A | 90 A | 90 A |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Rds On Drain Source Resistance | 3.5 mOhms | 4.6 mOhms | 6.3 mOhms |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |