IPG20N0 stock, IPG20N0, IPG20N06S4L26ATMA1


PartNumber	IPG20N06S4L26AATMA1	IPG20N06S4L26ATMA1	IPG20N06S4L26AATMA1-CUT TAPE
Description	MOSFET N-Ch 55V 20A TDSON-8	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TDSON-8	TDSON-8	-
Number of Channels	2 Channel	2 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	60 V	60 V	-
Id Continuous Drain Current	20 A	20 A	-
Rds On Drain Source Resistance	21 mOhms, 21 mOhms	21 mOhms, 21 mOhms	-
Vgs th Gate Source Threshold Voltage	1.2 V	1.2 V	-
Vgs Gate Source Voltage	16 V	16 V	-
Qg Gate Charge	20 nC, 20 nC	20 nC, 20 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C	-
Pd Power Dissipation	33 W	33 W	-
Configuration	Dual	Dual	-
Channel Mode	Enhancement	Enhancement	-
Qualification	AEC-Q101	AEC-Q101	-
Tradename	OptiMOS	OptiMOS	-
Packaging	Reel	Reel	-
Height	1 mm	1.27 mm	-
Length	5.9 mm	5.9 mm	-
Series	OptiMOS-T2	OptiMOS-T2	-
Transistor Type	2 N-Channel	2 N-Channel	-
Width	5.15 mm	5.15 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Fall Time	10 ns, 10 ns	10 ns, 10 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	1.5 ns, 1.5 ns	1.5 ns, 1.5 ns	-
Factory Pack Quantity	5000	5000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	18 ns, 18 ns	18 ns, 18 ns	-
Typical Turn On Delay Time	5 ns, 5 ns	5 ns, 5 ns	-
Part # Aliases	IPG20N06S4L-26A SP001023848	IPG20N06S4L-26 IPG2N6S4L26XT SP000705588	-
Unit Weight	0.003474 oz	0.003527 oz	-

Search Part Number : "IPG20N0", Match & Start with "IPG20N0" - Total : 105

メーカー	モデル	説明
Infineon Technologies	IPG20N06S4L26ATMA1	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
	IPG20N06S4L26ATMA1	MOSFET 2N-CH 60V 20A TDSON-8
	IPG20N06S4L26AATMA1	RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
	IPG20N06S4L26AATMA1-CUT TAPE	ブランドニューオリジナル
	IPG20N06S4L26XT	ブランドニューオリジナル

IPG20N0