| PartNumber | IPG20N04S409ATMA1 | IPG20N04S408AATMA1 | IPG20N04S408ATMA1 |
| Description | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | MOSFET MOSFET | MOSFET N-CHANNEL_30/40V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 7.9 mOhms, 7.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 28 nC, 28 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 54 W | - | - |
| Configuration | Dual | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS-T2 | - | - |
| Transistor Type | 2 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 10 ns, 10 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns, 3 ns | - | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns, 15 ns | - | - |
| Typical Turn On Delay Time | 12 ns, 12 ns | - | - |
| Part # Aliases | IPG20N04S4-09 IPG2N4S49XT SP000705570 | IPG20N04S4-08A SP000938100 | IPG20N04S4-08 IPG2N4S48XT SP000705582 |