IPI076

IPI076N12N3 G vs IPI076N15N5AKSA1 vs IPI076N12N3GAKSA1

 
PartNumberIPI076N12N3 GIPI076N15N5AKSA1IPI076N12N3GAKSA1
DescriptionMOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3MOSFETMOSFET N-CH 120V 100A TO262-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage120 V150 V-
Id Continuous Drain Current100 A112 A-
Rds On Drain Source Resistance7.6 mOhms5.9 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge76 nC61 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation188 W214 W-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesOptiMOS 3OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time10 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time50 nS4 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time39 nS20 ns-
Part # AliasesIPI076N12N3GAKSA1 IPI76N12N3GXK SP000652738IPI076N15N5 SP001326438-
Unit Weight0.084199 oz0.070548 oz-
Vgs th Gate Source Threshold Voltage-3 V-
Channel Mode-Enhancement-
Forward Transconductance Min-45 S-
Typical Turn On Delay Time-14 ns-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPI076N12N3 G MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3
IPI076N15N5AKSA1 MOSFET
IPI076N15N5AKSA1 MV POWER MOS
IPI076N12N3GAKSA1 MOSFET N-CH 120V 100A TO262-3
IPI076N12N3GXK Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI076N12N3GAKSA1)
IPI076N12N3 ブランドニューオリジナル
IPI076N12N3G ブランドニューオリジナル
IPI076N12N3 G Darlington Transistors MOSFET N-Ch 120V 100A I2PAK-3 OptiMOS 3
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