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| PartNumber | IPI100N04S303AKSA1 | IPI100N04S3 | IPI100N04S3-03 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Configuration | Single | - | Single |
| Packaging | Tube | - | Tube |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPI100N04S3-03 IPI100N04S303XK SP000261223 | - | - |
| Series | - | - | OptiMOS-T |
| Part Aliases | - | - | IPI100N04S303AKSA1 IPI100N04S303XK SP000261223 |
| Unit Weight | - | - | 0.084199 oz |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | I2PAK-3 |
| Pd Power Dissipation | - | - | 214 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 17 ns |
| Rise Time | - | - | 16 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 3.3 mOhms |
| Typical Turn Off Delay Time | - | - | 46 ns |
| Typical Turn On Delay Time | - | - | 30 ns |
| Channel Mode | - | - | Enhancement |