 |  | | |
| PartNumber | IPI50R299CPXKSA1 | IPI50R299CPXK | IPI50R299CP |
| Description | MOSFET N-CH 500V 12A TO262-3 | MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP | Darlington Transistors MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP |
| Manufacturer | - | - | INFINEON |
| Product Category | - | - | FETs - Single |
| Series | - | - | CoolMOS CP |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPI50R299CPXK IPI50R299CPXKSA1 SP000523748 |
| Unit Weight | - | - | 0.084199 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | CoolMOS |
| Package Case | - | - | I2PAK-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 104 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 550 V |
| Rds On Drain Source Resistance | - | - | 299 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 80 nS |
| Qg Gate Charge | - | - | 23 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI50R299CPXKSA1 | MOSFET N-CH 500V 12A TO262-3 | |
| IPI50R299CPXK | MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP | ||
| IPI50R299CP | Darlington Transistors MOSFET N-Ch 550V 12A I2PAK-3 CoolMOS CP |