 | |  | |
| PartNumber | IPI60R125CP | IPI60R165CPAKSA1 | IPI60R125CPXKSA1 |
| Description | MOSFET N-Ch 600V 25A I2PAK-3 CoolMOS CP | MOSFET HIGH POWER_LEGACY | MOSFET N-CH 650V 25A TO-262 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 125 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 208 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | CoolMOS CE | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | IPI60R125CPXKSA1 IPI6R125CPXK SP000297355 | IPI6R165CPXK SP000276736 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI60R125CP | MOSFET N-Ch 600V 25A I2PAK-3 CoolMOS CP | |
| IPI60R190C6 | MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6 | ||
| IPI60R199CP | MOSFET N-Ch 650V 16A I2PAK-3 CoolMOS CP | ||
| IPI60R199CPXKSA2 | MOSFET HIGH POWER_LEGACY | ||
| IPI60R165CPXKSA1 | MOSFET N-Ch 650V 21A I2PAK-3 | ||
| IPI60R125CPXKSA1 | MOSFET N-CH 650V 25A TO-262 | ||
| IPI60R199CPXKSA2 | HIGH POWER_LEGACY | ||
| IPI60R165CPAKSA1 | MOSFET N-CH 650V 21A TO-262 | ||
| IPI60R190C6XKSA1 | MOSFET N-CH 600V 20.2A TO262 | ||
| IPI60R199CPXKSA1 | MOSFET N-CH 600V 16A I2PAK | ||
| IPI60R165CPXKSA1 | RF Bipolar Transistors MOSFET N-Ch 650V 21A I2PAK-3 | ||
Infineon Technologies |
IPI60R190C6XKSA1 | MOSFET HIGH POWER_LEGACY | |
| IPI60R165CPAKSA1 | MOSFET HIGH POWER_LEGACY | ||
| IPI60R190C6XK | Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R190C6XKSA1) | ||
| IPI60R125P | ブランドニューオリジナル | ||
| IPI60R199 | ブランドニューオリジナル | ||
| IPI60R199CP | Trans MOSFET N-CH 650V 16A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R199CP) | ||
| IPI60R199CP(6R199P) | ブランドニューオリジナル | ||
| IPI60R199CP,6R199P | ブランドニューオリジナル | ||
| IPI60R125CP | Darlington Transistors MOSFET N-Ch 600V 25A I2PAK-3 CoolMOS CP | ||
| IPI60R190C6 | Darlington Transistors MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6 | ||
| IPI60R165CP | RF Bipolar Transistors MOSFET N-Ch 600V 21A I2PAK-3 CoolMOS CP |