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| PartNumber | IPL65R1K5C6SATMA1 | IPL65R1K0C6SATMA1 |
| Description | MOSFET N-Ch 650V 3A ThinPAK 5x6 | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | ThinPAK-56-8 | ThinPAK-56-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 3 A | 4.2 A |
| Rds On Drain Source Resistance | 1.5 Ohms | 1 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 11 nC | 15 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 26.6 W | 34.7 W |
| Configuration | Single | Single |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 6 mm | 6 mm |
| Series | CoolMOS C6 | CoolMOS C6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 18.2 ns | 13.6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5.9 ns | 5.2 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 41 ns |
| Typical Turn On Delay Time | 7.7 ns | 6.6 ns |
| Part # Aliases | IPL65R1K5C6S SP001163086 | IPL65R1K0C6S SP001163084 |
| Unit Weight | 0.002677 oz | 0.002677 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL65R1K5C6SATMA1 | MOSFET N-Ch 650V 3A ThinPAK 5x6 | |
| IPL65R1K0C6SATMA1 | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | ||
| IPL65R1K0C6SATMA1 | MOSFET N-CH 8TSON | ||
| IPL65R1K5C6SATMA1 | MOSFET N-CH 8TSON | ||
| IPL65R1K0C6 | ブランドニューオリジナル | ||
| IPL65R1K0C6S | ブランドニューオリジナル |