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| PartNumber | IPP028N08N3 G | IPP028N08N3 | IPP028N08N3G |
| Description | MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 | 100 A, 80 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
| Manufacturer | Infineon | INFINEON | INFINEO |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 33 ns | 33 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 73 ns | 73 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 86 ns | 86 ns | - |
| Typical Turn On Delay Time | 28 ns | 28 ns | - |
| Part # Aliases | IPP028N08N3GXKSA1 IPP28N8N3GXK SP000680766 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPP028N08N3GXK IPP028N08N3GXKSA1 SP000680766 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 300 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Rds On Drain Source Resistance | - | 2.8 mOhms | - |