 |  | | |
| PartNumber | IPP034NE7N3 G | IPP034NE7N | IPP034NE7N3 |
| Description | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 3.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 88 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 214 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 150 S, 75 S | - | - |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 85 ns | 85 ns | 85 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | 40 ns |
| Typical Turn On Delay Time | 16 ns | 16 ns | 16 ns |
| Part # Aliases | IPP034NE7N3GXKSA1 IPP34NE7N3GXK SP000641724 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Part Aliases | - | IPP034NE7N3GXK IPP034NE7N3GXKSA1 SP000641724 | IPP034NE7N3GXK IPP034NE7N3GXKSA1 SP000641724 |
| Package Case | - | TO-220-3 | TO-220-3 |
| Pd Power Dissipation | - | 214 W | 214 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 100 A | 100 A |
| Vds Drain Source Breakdown Voltage | - | 75 V | 75 V |
| Vgs th Gate Source Threshold Voltage | - | 3.1 V | 3.1 V |
| Rds On Drain Source Resistance | - | 3.4 mOhms | 3.4 mOhms |
| Qg Gate Charge | - | 88 nC | 88 nC |
| Forward Transconductance Min | - | 150 S 75 S | 150 S 75 S |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP034NE7N3 G | MOSFET N-Ch 75V 100A TO220-3 OptiMOS 3 | |
| IPP034NE7N3 G | Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-220 | ||
| IPP034NE7N3GXKSA1 | MOSFET N-CH 75V 100A TO220-3 | ||
| IPP034NE7N | ブランドニューオリジナル | ||
| IPP034NE7N3 | ブランドニューオリジナル | ||
| IPP034NE7N3 IRFB3077PB | ブランドニューオリジナル | ||
| IPP034NE7N3G , 2SD2532 | ブランドニューオリジナル | ||
| IPP034NE7N3G 034NE7N | ブランドニューオリジナル | ||
| IPP034NE7N3G,034NE7N,IPP | ブランドニューオリジナル | ||
| IPP034NE7N3G | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |