IPP114N0

IPP114N03L G vs IPP114N03LG vs IPP114N03LGHKSA1

 
PartNumberIPP114N03L GIPP114N03LGIPP114N03LGHKSA1
DescriptionMOSFET N-Ch 30V 30A TO220-3 OptiMOS 3Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABTrans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube - Bulk (Alt: IPP114N03LGHKSA1)
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance11.4 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation38 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time2.4 ns--
Product TypeMOSFET--
Rise Time3 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time3.8 ns--
Part # AliasesIPP114N03LGHKSA1 SP000264168--
Unit Weight0.211644 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPP114N03L G MOSFET N-Ch 30V 30A TO220-3 OptiMOS 3
Infineon Technologies
Infineon Technologies
IPP114N03L G MOSFET N-CH 30V 30A TO-220-3
IPP114N03LG Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP114N03LGHKSA1 Trans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube - Bulk (Alt: IPP114N03LGHKSA1)
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