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| PartNumber | IPP120N08S404AKSA1 | IPP120N08S403AKSA1 |
| Description | MOSFET N-CHANNEL 75/80V | MOSFET N-CHANNEL 75/80V |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPP120N08S4-04 SP000989096 | IPP120N08S4-03 SP000989106 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| RoHS | - | Y |
| Vds Drain Source Breakdown Voltage | - | 80 V |
| Id Continuous Drain Current | - | 120 A |
| Rds On Drain Source Resistance | - | 2.1 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 167 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 278 W |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | - |
| Fall Time | - | 50 ns |
| Rise Time | - | 15 ns |
| Typical Turn Off Delay Time | - | 60 ns |
| Typical Turn On Delay Time | - | 30 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP120N08S404AKSA1 | MOSFET N-CHANNEL 75/80V | |
| IPP120N08S403AKSA1 | MOSFET N-CHANNEL 75/80V | ||
| IPP120N08S403AKSA1 | MOSFET N-CHANNEL 75/80V | ||
| IPP120N08S404AKSA1 | MOSFET N-CHANNEL 75/80V | ||
| IPP120N08S4-03 | Transistor MOSFET N-CH 80V 120A 3-Pin TO-220 Tube (Alt: IPP120N08S4-03) |