IPP12CNE

IPP12CNE8N G vs IPP12CNE8N vs IPP12CNE8NG

 
PartNumberIPP12CNE8N GIPP12CNE8NIPP12CNE8NG
DescriptionMOSFET N-Ch 85V 67A TO220-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage85 V--
Id Continuous Drain Current67 A--
Rds On Drain Source Resistance12.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time21 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesIPP12CNE8NGXK--
Unit Weight0.211644 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPP12CNE8N G MOSFET N-Ch 85V 67A TO220-3
Infineon Technologies
Infineon Technologies
IPP12CNE8N G MOSFET N-CH 85V 67A TO-220
IPP12CNE8N ブランドニューオリジナル
IPP12CNE8NG ブランドニューオリジナル
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