 |  | | |
| PartNumber | IPP180N10N3GXKSA1 | IPP180N10N3G | IPP180N10N3GXKSA1 , 2SD9 |
| Description | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 43 A | - | - |
| Rds On Drain Source Resistance | 15.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | G IPP180N10N3 IPP18N1N3GXK SP000683090 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP180N10N3GXKSA1 | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | |
| IPP180N10N3GXKSA1 | MOSFET N-CH 100V 43A TO220-3 | ||
| IPP180N10N3G | ブランドニューオリジナル | ||
| IPP180N10N3GXKSA1 , 2SD9 | ブランドニューオリジナル |