 | |  | |
| PartNumber | IPP65R095C7 | IPP65R095C7XKSA1 | IPP65R099C6XKSA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | RF Bipolar Transistors MOSFET N-Ch 700V 38A TO220-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 24 A | 24 A | - |
| Rds On Drain Source Resistance | 84 mOhms | 84 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 45 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 128 W | 128 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS C7 | CoolMOS C7 | IPP65R099 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | 60 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | IPP65R095C7XKSA1 SP001080122 | IPP65R095C7 SP001080122 | - |
| Unit Weight | 0.081130 oz | 0.211644 oz | 0.211644 oz |
| Part Aliases | - | - | IPP65R099C6 IPP65R099C6XK SP000895218 |
| Package Case | - | - | TO-220-3 |
| Id Continuous Drain Current | - | - | 38 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 99 mOhms |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP65R095C7 | MOSFET HIGH POWER_NEW | |
| IPP65R095C7XKSA1 | MOSFET HIGH POWER_NEW | ||
| IPP65R095C7XKSA1 | MOSFET N-CH 650V TO-220-3 | ||
| IPP65R099C6XKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 38A TO220-3 | ||
| IPP65R099C6 | MOSFET N-Ch 700V 38A TO220-3 |