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| PartNumber | IPP80N04S3-04/3N0404 | IPP80N04S3-06 | IPP80N04S3-03 |
| Description | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | IGBT Transistors MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | |
| Manufacturer | - | INFINEON | Infineon Technologies |
| Product Category | - | FETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | - | OptiMOS-T | OptiMOS-T |
| Packaging | - | Tube | Tube |
| Part Aliases | - | IPP80N04S306AKSA1 IPP80N04S306XK SP000261233 | IPP80N04S303AKSA1 IPP80N04S303XK SP000261229 |
| Unit Weight | - | 0.211644 oz | 0.211644 oz |
| Mounting Style | - | Through Hole | Through Hole |
| Tradename | - | OptiMOS | OptiMOS |
| Package Case | - | TO-220-3 | TO-220-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 100 W | 188 W |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 10 ns | 14 ns |
| Rise Time | - | 10 ns | 17 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 80 A | 80 A |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Rds On Drain Source Resistance | - | 5.7 mOhms | 3.5 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 20 ns | 39 ns |
| Typical Turn On Delay Time | - | 15 ns | 25 ns |
| Channel Mode | - | Enhancement | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| IPP80N04S3-04/3N0404 | ブランドニューオリジナル | ||
| IPP80N04S3-06/3N0406 | ブランドニューオリジナル | ||
| IPP80N04S3-06 | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | ||
| IPP80N04S3-03 | IGBT Transistors MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | ||
Infineon Technologies |
IPP80N04S3-04 | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T |