 | |  | |
| PartNumber | IPS50R520CPBKMA1 | IPS50R520CP | IPS50R520CPAKMA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 500V 7.1A IPAK-3 CoolMOS CP | MOSFET N-CH 500V 7.1A TO251-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | TO-251-3 | - |
| Packaging | Tube | Tube | - |
| Height | 6.22 mm | 6.22 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Width | 2.38 mm | 2.38 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPS50R520CPBKMA1 SP000307420 | IPS50R520CPBKMA1 SP000236067 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Id Continuous Drain Current | - | 7.1 A | - |
| Rds On Drain Source Resistance | - | 520 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 66 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | CoolMOS | - |
| Series | - | CoolMOS CE | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 17 ns | - |
| Rise Time | - | 14 ns | - |
| Factory Pack Quantity | - | 1500 | - |
| Typical Turn Off Delay Time | - | 80 ns | - |
| Typical Turn On Delay Time | - | 35 ns | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPS50R520CPBKMA1 | MOSFET LOW POWER_LEGACY | |
| IPS50R520CP | MOSFET N-Ch 500V 7.1A IPAK-3 CoolMOS CP | ||
Infineon Technologies |
IPS50R520CPBKMA1 | LOW POWER_LEGACY | |
| IPS50R520CP | MOSFET N-CH 550V 7.1A TO-251 | ||
| IPS50R520CPAKMA1 | MOSFET N-CH 500V 7.1A TO251-3 |