| PartNumber | IPU50R3K0CEAKMA1 | IPU50R3K0CEBKMA1 |
| Description | MOSFET CONSUMER | MOSFET N-Ch 500V 1.7A IPAK-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Tube | Tube |
| Height | 6.22 mm | 6.22 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | CoolMOS CE | CoolMOS CE |
| Width | 2.38 mm | 2.38 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPU50R3K0CE SP001396836 | IPU50R3K0CEBKMA1 SP001022960 |
| Unit Weight | 0.139332 oz | 0.012102 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Id Continuous Drain Current | - | 2.6 A |
| Rds On Drain Source Resistance | - | 2.7 Ohms |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 4.3 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 26 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Transistor Type | - | 1 N-Channel |
| Fall Time | - | 49 ns |
| Rise Time | - | 5.8 ns |
| Typical Turn Off Delay Time | - | 23 ns |
| Typical Turn On Delay Time | - | 7.3 ns |