IPW60R125C6

IPW60R125C6FKSA1 vs IPW60R125C6 6R125C6 vs IPW60R125C6

 
PartNumberIPW60R125C6FKSA1IPW60R125C6 6R125C6IPW60R125C6
DescriptionMOSFET N-Ch 600V 30A TO247-3 CoolMOS C6IGBT Transistors MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance110 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge96 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation219 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameCoolMOS-CoolMOS
PackagingTube-Tube
Height21.1 mm--
Length16.13 mm--
SeriesCoolMOS C6-CoolMOS C6
Transistor Type1 N-Channel-1 N-Channel
Width5.21 mm--
BrandInfineon Technologies--
Fall Time7 ns-7 ns
Product TypeMOSFET--
Rise Time12 ns-12 ns
Factory Pack Quantity240--
SubcategoryMOSFETs--
Typical Turn Off Delay Time83 ns-83 ns
Typical Turn On Delay Time15 ns-15 ns
Part # AliasesIPW60R125C6 IPW6R125C6XK SP000641912--
Unit Weight1.340411 oz-1.340411 oz
Part Aliases--IPW60R125C6FKSA1 IPW60R125C6XK SP000641912
Package Case--TO-247-3
Pd Power Dissipation--219 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--30 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--125 mOhms
Qg Gate Charge--96 nC
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPW60R125C6FKSA1 MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6
IPW60R125C6FKSA1 MOSFET N-CH 600V 30A TO247
IPW60R125C6XK Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R125C6FKSA1)
IPW60R125C6 6R125C6 ブランドニューオリジナル
IPW60R125C6S ブランドニューオリジナル
IPW60R125C6 IGBT Transistors MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6
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