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| PartNumber | IPW65R099C6 | IPW65R099C6,65C6099 | IPW65R099C6FKSA1 |
| Description | MOSFET N-Ch 700V 38A TO247-3 | RF Bipolar Transistors MOSFET N-Ch 700V 38A TO247-3 | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 38 A | - | - |
| Rds On Drain Source Resistance | 89 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 127 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 278 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS C6 | - | IPW65R099 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 77 ns | - | - |
| Typical Turn On Delay Time | 10.6 ns | - | - |
| Part # Aliases | IPW65R099C6FKSA1 IPW65R99C6XK SP000896396 | - | - |
| Unit Weight | 1.340411 oz | - | 1.340411 oz |
| Part Aliases | - | - | IPW65R099C6 IPW65R099C6XK SP000896396 |
| Package Case | - | - | TO-247-3 |
| Id Continuous Drain Current | - | - | 38 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 99 mOhms |