 |  |  | |
| PartNumber | IRF2805PBF | IRF2805LPBF | IRF2805SPBF |
| Description | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 175 A | 135 A | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 4.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 150 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 330 W | 200 W | - |
| Configuration | Single | Single | Single |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 9.45 mm | - |
| Length | 10 mm | 10.2 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 91 S | - | - |
| Fall Time | 110 ns | - | 110 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | - | 120 ns |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 68 ns | - | 68 ns |
| Typical Turn On Delay Time | 14 ns | - | 14 ns |
| Part # Aliases | SP001559506 | SP001571164 | - |
| Unit Weight | 0.211644 oz | 0.084199 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 200 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 135 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V to 4 V |
| Rds On Drain Source Resistance | - | - | 4.7 mOhms |
| Qg Gate Charge | - | - | 150 nC |
| Forward Transconductance Min | - | - | 91 S |
| Channel Mode | - | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF2805STRLPBF | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | |
| IRF2805PBF | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | ||
| IRF2805STRRPBF | MOSFET N-CH 55V 135A D2PAK | ||
| IRF2805LPBF | MOSFET N-CH 55V 135A TO-262 | ||
| IRF2805PBF | MOSFET N-CH 55V 75A TO-220AB | ||
| IRF2805STRLPBF | MOSFET N-CH 55V 135A D2PAK | ||
| IRF2805SPBF | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 4.7mOhms 150nC | ||
Infineon / IR |
IRF2805LPBF | MOSFET MOSFT 55V 135A 4.7mOhm 150nC | |
| IRF2805 | ブランドニューオリジナル | ||
| IRF2805L | ブランドニューオリジナル | ||
| IRF2805PBF,IRF2805 | ブランドニューオリジナル | ||
| IRF2805PBF. | ブランドニューオリジナル | ||
| IRF2805PBF/INFINEON | ブランドニューオリジナル | ||
| IRF2805S | ブランドニューオリジナル | ||
| IRF2805STRPBF | ブランドニューオリジナル |