 |  | | |
| PartNumber | IRF5810TRPBF. | IRF5810TR | IRF5810TRPBF |
| Description | MOSFET 2P-CH 20V 2.9A 6-TSOP | MOSFET 2P-CH 20V 2.9A 6-TSOP | |
| Manufacturer | IR | Infineon Technologies | Infineon Technologies |
| Product Category | IC Chips | FETs - Arrays | FETs - Arrays |
| Series | - | HEXFETR | HEXFETR |
| Packaging | - | Tape & Reel (TR) | Digi-ReelR |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | 6-TSOP | 6-TSOP |
| FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | - | 960mW | 960mW |
| Drain to Source Voltage Vdss | - | 20V | 20V |
| Input Capacitance Ciss Vds | - | 650pF @ 16V | 650pF @ 16V |
| FET Feature | - | Logic Level Gate | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 2.9A | 2.9A |
| Rds On Max Id Vgs | - | 90 mOhm @ 2.9A, 4.5V | 90 mOhm @ 2.9A, 4.5V |
| Vgs th Max Id | - | 1.2V @ 250μA | 1.2V @ 250μA |
| Gate Charge Qg Vgs | - | 9.6nC @ 4.5V | 9.6nC @ 4.5V |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| IRF5810TRPBF. | ブランドニューオリジナル | ||
Infineon Technologies |
IRF5810TR | MOSFET 2P-CH 20V 2.9A 6-TSOP | |
| IRF5810TRPBF | MOSFET 2P-CH 20V 2.9A 6-TSOP |