IRF5852

IRF5852TRPBF vs IRF5852 vs IRF5852TR

 
PartNumberIRF5852TRPBFIRF5852IRF5852TR
DescriptionMOSFET MOSFT DUAL NCh 20V 2.7AMOSFET 2N-CH 20V 2.7A 6-TSOPMOSFET 2N-CH 20V 2.7A 6-TSOP
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.7 A--
Rds On Drain Source Resistance90 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge4 nC--
Pd Power Dissipation960 mW--
ConfigurationDual--
PackagingReel-Tape & Reel (TR)
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
Transistor Type2 N-Channel--
Width1.5 mm--
BrandInfineon / IR--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001554076--
Unit Weight0.000705 oz--
Series--HEXFETR
Package Case--SOT-23-6 Thin, TSOT-23-6
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--6-TSOP
FET Type--2 N-Channel (Dual)
Power Max--960mW
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--400pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.7A
Rds On Max Id Vgs--90 mOhm @ 2.7A, 4.5V
Vgs th Max Id--1.25V @ 250μA
Gate Charge Qg Vgs--6nC @ 4.5V
メーカー モデル 説明 RFQ
Infineon / IR
Infineon / IR
IRF5852TRPBF MOSFET MOSFT DUAL NCh 20V 2.7A
Infineon Technologies
Infineon Technologies
IRF5852 MOSFET 2N-CH 20V 2.7A 6-TSOP
IRF5852TR MOSFET 2N-CH 20V 2.7A 6-TSOP
IRF5852TRPBF MOSFET 2N-CH 20V 2.7A 6-TSOP
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