 |  | | |
| PartNumber | IRF6648TR1PBF | IRF6648TR1PBF , 2SJ579 | IRF6648TR1PBF SMD |
| Description | MOSFET MOSFT 60V 86A 7.0mOhm 36nC Qg | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-MN | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 86 A | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.9 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 36 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 89 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 31 S | - | - |
| Fall Time | 13 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 29 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001570188 | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6648TR1PBF | MOSFET MOSFT 60V 86A 7.0mOhm 36nC Qg | |
Infineon Technologies |
IRF6648TR1PBF | MOSFET N-CH 60V 86A DIRECTFET | |
| IRF6648TR1PBF , 2SJ579 | ブランドニューオリジナル | ||
| IRF6648TR1PBF SMD | ブランドニューオリジナル |