IRF7351

IRF7351TRPBF vs IRF7351PBF vs IRF7351TRPBF-CUT TAPE

 
PartNumberIRF7351TRPBFIRF7351PBFIRF7351TRPBF-CUT TAPE
DescriptionMOSFET MOSFT 60V 8A 17.8mOhm 24nC DualMOSFET 2N-CH 60V 8A 8-SOIC
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance17.8 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge24 nC--
Pd Power Dissipation2 W--
ConfigurationDualDual-
PackagingReelTube Alternate Packaging-
Height1.75 mm--
Length4.9 mm--
Transistor Type2 N-Channel2 N-Channel-
Width3.9 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001577392--
Unit Weight0.005820 oz0.019048 oz-
Series-HEXFETR-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 N-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-1330pF @ 30V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-8A-
Rds On Max Id Vgs-17.8 mOhm @ 8A, 10V-
Vgs th Max Id-4V @ 50μA-
Gate Charge Qg Vgs-36nC @ 10V-
Pd Power Dissipation-2 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-8 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-17.8 mOhms-
Qg Gate Charge-24 nC-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IRF7351TRPBF MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual
IRF7351PBF MOSFET 2N-CH 60V 8A 8-SOIC
IRF7351TRPBF MOSFET 2N-CH 60V 8A 8-SOIC
IRF7351TRPBF-CUT TAPE ブランドニューオリジナル
IRF7351TRPBF. ブランドニューオリジナル
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