 |  | | |
| PartNumber | IRF7473TRPBF | IRF7473TR | IRF7473TRPBF-1 |
| Description | MOSFET MOSFT 100V 6.9A 26mOhm 61nC | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 6.9 A | - | - |
| Rds On Drain Source Resistance | 26 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 61 nC | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001555418 | - | - |
| Unit Weight | 0.013404 oz | 0.019048 oz | - |
| Package Case | - | SOIC-8 | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 6.9 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 26 mOhms | - |
| Qg Gate Charge | - | 61 nC | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7473TRPBF | MOSFET MOSFT 100V 6.9A 26mOhm 61nC | |
| IRF7473TR | ブランドニューオリジナル | ||
| IRF7473TRPBF-1 | ブランドニューオリジナル | ||
Infineon Technologies |
IRF7473TRPBF | MOSFET N-CH 100V 6.9A 8-SOIC |