IRF7530T

IRF7530TRPBF vs IRF7530TR vs IRF7530TR,IRF7530TRPBF,F

 
PartNumberIRF7530TRPBFIRF7530TRIRF7530TR,IRF7530TRPBF,F
DescriptionMOSFET MOSFT DUAL NCh 20V 5.4A Micro 8MOSFET 2N-CH 20V 5.4A MICRO8
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseMicro-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.4 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.3 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR-
Height1.11 mm--
Length3 mm--
Transistor Type2 N-Channel--
Width3 mm--
BrandInfineon / IR--
Forward Transconductance Min13 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time36 ns--
Typical Turn On Delay Time8.5 ns--
Part # AliasesSP001572074--
Series-HEXFETR-
Package Case-8-TSSOP, 8-MSOP (0.118", 3.00mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-Micro8-
FET Type-2 N-Channel (Dual)-
Power Max-1.3W-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-1310pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-5.4A-
Rds On Max Id Vgs-30 mOhm @ 5.4A, 4.5V-
Vgs th Max Id-1.2V @ 250μA-
Gate Charge Qg Vgs-26nC @ 4.5V-
メーカー モデル 説明 RFQ
Infineon / IR
Infineon / IR
IRF7530TRPBF MOSFET MOSFT DUAL NCh 20V 5.4A Micro 8
IRF7530TRPBF-CUT TAPE ブランドニューオリジナル
IRF7530TR,IRF7530TRPBF,F ブランドニューオリジナル
Infineon Technologies
Infineon Technologies
IRF7530TR MOSFET 2N-CH 20V 5.4A MICRO8
IRF7530TRPBF MOSFET 2N-CH 20V 5.4A MICRO8
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